Mitigating thermal impacts on adjacent stacked semiconductor devices

ABSTRACT

A semiconductor device assembly and associated methods are disclosed herein. The semiconductor device assembly includes (1) a substrate having a first side and a second side opposite the first side; (2) a first set of stacked semiconductor devices at the first side of the substrate; (3) a second set of stacked semiconductor devices adjacent to one side of the first set of stacked semiconductor devices; (4) a third set of stacked semiconductor devices adjacent to an opposite side of the first set of stacked semiconductor devices; and (5) a temperature adjusting component at the second side and aligned with the second set of stacked semiconductor devices. The temperature adjusting component is positioned to absorb the thermal energy and thereby thermally isolate the second set of stacked semiconductor devices from the first set of stacked semiconductor devices.

TECHNICAL FIELD

The present technology is directed to apparatus and methods foreliminating or at least mitigating the thermal impact of thermalprocessing on stacked semiconductor devices. More particularly, someembodiments of the present technology relate to apparatus and methodsfor mitigating thermal impacts on adjacent stacked semiconductor devicesgenerated during thermal bonding processing.

BACKGROUND

Packaged and stacked semiconductor dies, including memory chips,microprocessor chips, logic chips and imager chips, typically include asemiconductor die mounted on a substrate and encased in a plasticprotective covering. Individual semiconductor die can include functionalfeatures, such as memory cells, processor circuits, imager devices andother circuitry, as well as bond pads electrically connected to thefunctional features. Semiconductor manufacturers continually reduce thesize of die packages to fit within the space constraints of electronicdevices. One approach for increasing the processing power of asemiconductor package is to vertically stack multiple semiconductor dieson top of one another in a single package. Multiple semiconductor diescan be connected using a thermal bonding process that includes (i)positioning a film between two of these semiconductor dies and (ii)thermally curing the film.

BRIEF DESCRIPTION OF THE DRAWINGS

Many aspects of the present technology can be better understood withreference to the following drawings. The components in the drawings arenot necessarily to scale. Instead, emphasis is placed on illustratingthe principles of the present technology.

FIG. 1A is a schematic cross-sectional view of a semiconductor deviceassembly in accordance with an embodiment of the present technology.

FIG. 1B is a schematic bottom view of a semiconductor device assembly inaccordance with an embodiment of the present technology.

FIGS. 2A-2C are schematic bottom views of semiconductor device packageassemblies in accordance with embodiments of the present technology.

FIG. 3 is a schematic, isometric view of a temperature adjustingcomponent in accordance with an embodiment of the present technology.

FIGS. 4A and 4B are schematic cross-sectional views of semiconductordevice package assemblies in accordance with an embodiment of thepresent technology.

FIG. 5 is a block diagram illustrating a system that incorporates asemiconductor assembly in accordance with an embodiment of the presenttechnology.

FIG. 6 is a flowchart illustrating a method in accordance with anembodiment of the present technology.

DETAILED DESCRIPTION

Specific details of several embodiments of stacked semiconductor diepackages and methods of manufacturing such die packages are describedbelow. The term “semiconductor device” generally refers to a solid-statedevice that includes one or more semiconductor materials. Asemiconductor device can include, for example, a semiconductorsubstrate, wafer, or die that is singulated from a wafer or substrate.Throughout the disclosure, semiconductor dies are generally described inthe context of semiconductor devices but are not limited thereto.

The term “semiconductor device package” can refer to an arrangement withone or more semiconductor devices incorporated into a common package. Asemiconductor device package can include a housing or casing thatpartially or completely encapsulates at least one semiconductor device.A semiconductor device package can also include an interposer substratethat carries one or more semiconductor devices and is attached to orotherwise incorporated into the casing. The term “semiconductor deviceassembly” can refer to an assembly that includes multiple stackedsemiconductor devices. As used herein, the terms “vertical,” “lateral,”“upper,” and “lower” can refer to relative directions or positions offeatures in the semiconductor device or package in view of theorientation shown in the Figures. These terms, however, should beconstrued broadly to include semiconductor devices having otherorientations, such as inverted or inclined orientations.

When using thermal energy to cure two adjacent semiconductor devicepackages that are close to each other, the thermal energy applied to afirst package can adversely affect a second package. For example, excessthermal energy can further harden or otherwise impact a film of thesecond film such that it cannot properly deform to and/or adhere toconnecting semiconductor dies. The present technology provides asolution to address this issue.

FIG. 1A is a schematic cross-sectional view of a semiconductor deviceassembly 100 in accordance with an embodiment of the present technology.The semiconductor device assembly 100 includes a base substrate 101, afirst set of stacked semiconductor devices 103, and a second set ofstacked semiconductor devices 105. The first and second sets ofsemiconductor devices 103, 105 are adjacent to each other and carried bythe base substrate 101. The semiconductor device assembly 100 can alsoinclude more than two semiconductor device packages. The first andsecond sets of stacked semiconductor devices 103, 105 are to beencapsulated or covered by suitable materials such as dielectricmaterials, epoxy resin, etc. The encapsulated first and second sets ofstacked semiconductor devices 103, 105 can be named first and secondsemiconductor device packages, respectively.

The first set of stacked semiconductor devices 103 includes multiplesemiconductor devices 1031 and multiple curable layers 1033 between oron the semiconductor devices 1031, respectively. In the embodimentillustrated in FIG. 1A, the first set of stacked semiconductor devices103 includes eight semiconductor devices 1031 and eight curable layers1033. However, it will be appreciated that the first set of stackedsemiconductor devices 103 can have a different number of semiconductordevices 1031 and curable layers 1033.

The second set of stacked semiconductor devices 105 can also includemultiple semiconductor devices 1051 and multiple curable layers 1053between or on the semiconductor devices 1031, respectively. Theembodiment of the second set of stacked semiconductor devices 105 shownin FIG. 1A has eight semiconductor devices 1051 and eight curable layers1053, but the second set of stacked semiconductor devices 105 caninclude a different number of semiconductor devices 1051 and curablelayers 1053 in other embodiments.

The curable layers 1033, 1053 can include a die-attaching material forbonding the semiconductor devices 1031, 1051 to one another or to thebase substrate 101. The curable layers 1033, 1053 can be anon-conductive film (NCF), a non-conductive paste (NCP), etc. Thecurable layers 1033, 1053 can also include heat-sensitive ortemperature-sensitive materials such that the stiffness or flexibilityof the curable layers 1033, 1053 can be manipulated by adjusting thetemperature or thermal energy.

The curable layers 1033 can be cured by applying thermal energy from athermal component 109 of a bond head 107. In some embodiments, thethermal component 109 can be an external component that is attached tothe bond head 107. As shown in FIG. 1A, the heat generated by thethermal component 109 flows through the first semiconductor die package103 toward the base substrate 101 in direction D₁ and thereby cures thecurable layers 1033. A portion of the thermal energy can also flowtoward the second set of stacked semiconductor devices 105, as indicatedby direction D₂, and then upward to one or more of the curable layers1053, as indicated by direction D3. This can adversely affect or more ofthe curable layers 1053.

The semiconductor device assembly 100 of the present technology can bemanufactured by using a temperature adjusting component 111 configuredto inhibit or prevent thermal energy generated by the thermal component109 from reaching the curable layers 1053 of the second set of stackedsemiconductor devices 105. The temperature adjusting component 111 isaccordingly configured to at least partially thermally isolate thesecond set of stacked semiconductor devices 105 from the first set ofstacked semiconductor devices 103. As shown in FIG. 1A, the temperatureadjusting component 111 can be adjacent to the base substrate 101 andopposite to the second set of stacked semiconductor devices 105. Thetemperature adjusting component 111 can be in an area A₁ defined by aside 103 a of the first set of stacked semiconductor devices 103 and asecond side 105 b of the second set of stacked semiconductor devices105. For example, as shown in FIG. 1A, the temperature adjustingcomponent 111 is positioned such that an edge 111 a of the temperatureadjusting component 111 is aligned with a first side 105 a of the secondset of stacked semiconductor devices 105. In some embodiments, thetemperature adjusting component 111 can be shaped or formed to cover asubstantial portion of area A₁. For example, the substantial portion canmean more than 90%, 75%, or 50% in various embodiments.

The temperature adjusting component 111 can also or alternatively be inan area A₂ and/or an Area A₃ . When the temperature adjusting component111 is in Area A₂ , the temperature adjusting component 111 absorbs heattransferred through the base substrate 101 from both sides of the secondset of stacked semiconductor devices 105. When the temperature adjustingcomponent 111 is in Area A₃ , the temperature adjusting component 111directly absorbs excessive heat from directly underneath the first setof stacked semiconductor devices 103.

The temperature adjusting component 111 can be a cooling unit or a heatsink configured to absorb the thermal energy from the thermal component109 to maintain the temperature of the base substrate 101 within adesired range. The temperature adjusting component 111, for example, canbe a “passive” cooling unit that only absorbs heat energy transferredthereto and cools through conduction and convection to the environment.The temperature adjusting component 111 can alternatively be an “active”cooling unit that actively cools other components (e.g., the second setof stacked semiconductor devices 105). In such embodiments, thetemperature adjusting component 111 can be a thermoelectric component,such as a thermoelectric cooler, a Peltier device, a solid-staterefrigerator, etc.

FIG. 1B a schematic bottom view of the semiconductor device assembly 100shown in FIG. 1A. The second set of stacked semiconductor devices 105has a first lateral dimension X₁ and a second lateral dimension Y₁ . Thefirst set of stacked semiconductor devices 103 has generally the samelateral dimensions as the second set of stacked semiconductor devices105. The temperature adjusting component 111 has a first lateraldimension X₂ and a second lateral dimension Y₂ . In the embodimentillustrated in FIG. 1B, the first lateral dimension X₂ of thetemperature adjusting component 111 is smaller than the first lateraldimension X₁ of the second set of stacked semiconductor devices 105,whereas the second lateral dimension Y₂ of the temperature adjustingcomponent 111 is greater than the second lateral dimension Y₁ of thesecond set of stacked semiconductor devices 105. The temperatureadjusting component 111 can have a rectilinear shape, such as a square,a rectangle (shown in FIG. 1B), etc.

FIGS. 2A-2C are schematic bottom views of the semiconductor devicepackage assemblies 100 in accordance with embodiments of the presenttechnology. In the embodiment illustrated in FIG. 2A, the first lateraldimension X₂ of the temperature adjusting component 111 is greater thanthe first lateral dimension X₁ of the second set of stackedsemiconductor devices 105, and the second lateral dimension Y₂ of thetemperature adjusting component 111 is also greater than the secondlateral dimension Y₁ of the second set of stacked semiconductor devices105. In the embodiment illustrated in FIG. 2B, the first lateraldimension X₂ of the temperature adjusting component 111 is greater thanthe first lateral dimension X₁ of the second set of stackedsemiconductor devices 105, whereas the second lateral dimension Y₂ ofthe temperature adjusting component 111 is generally the same as thesecond lateral dimension Y₁ of the second set of stacked semiconductordevices 105. In the embodiment illustrated in FIG. 2C, the first lateraldimension X₂ of the temperature adjusting component 111 is generally thesame as the first lateral dimension X₁ of the second set of stackedsemiconductor devices 105, and the second lateral dimension Y₂ of thetemperature adjusting component 111 is also generally the same as thesecond lateral dimension Y₁ of the second set of stacked semiconductordevices 105.

FIG. 3 is a schematic, isometric view of a temperature adjustingcomponent 311 in accordance with an embodiment of the presenttechnology. The temperature adjusting component 311 is a rectangularring. As shown, the temperature adjusting component 311 has a firstexternal dimension X₃ and a second external dimension Y₃ . Thetemperature adjusting component 311 also has a first inner dimension X₄and a second inner dimension Y₄ . The first external dimension X₃ isgreater than the first inner dimension X₄ . The second externaldimension Y₃ is greater than the second inner dimension Y₄ . Thedifference between the first external dimension X₃ and the first innerdimension X₄ (or the difference between the second external dimension Y₃and the second inner dimension Y₄ ) can vary in various embodimentsdepending on factors such as the dimension of the second set of stackedsemiconductor devices 105, a target temperature for curing the curablelayers 1033 of the first set of stacked semiconductor devices 103, typesof materials of the curable layers 1033, 1053, a distance or gap betweenthe first and second sets of semiconductor devices 103, 105, etc.

FIG. 4A is a schematic cross-sectional view of a semiconductor deviceassembly 400 in accordance with an embodiment of the present technology.The semiconductor device assembly 400 includes a base substrate 401, afirst set of stacked semiconductor devices 403, a second set of stackedsemiconductor devices 405, and a third set of stacked semiconductordevices 406. The second and third sets of stacked semiconductor devices405 and 406 are on opposite sides of the first set of stackedsemiconductor devices 403. The semiconductor device packages 403, 405,and 406 are attached to a front side 401 a of the base substrate 401,and the base substrate 401 has a back side 401b. In some embodiments,the semiconductor device assembly 400 can include more than threesemiconductor device packages.

As shown in FIG. 4A, a thermal component 409 of a bond head 407 is usedheat the first set of stacked semiconductor devices 403 to bond thesemiconductor devices 4031 in the first set of stacked semiconductordevices 403 together. The semiconductor devices 4031 can be bonded bycuring films 4033 attached to the semiconductor devices 4031,respectively. The heat generated by the thermal component 409 flowstoward the base substrate 401, as indicated by direction D₄.

The semiconductor device assembly 400 also has a cooling unit 411attached to the back side 401 b of the base substrate 401. The backsidecooling unit 411 is configured to inhibit or prevent heat generated bythe thermal component 409 from transferring to either the second set ofstacked semiconductor devices 405 or the third set of stackedsemiconductor devices 406 via the base substrate 401. In someembodiments, the backside cooling unit 411 can be formed with a recess413, which can effectively prevent the backside cooling unit 411 fromabsorbing too much heat from the base substrate 401. This may be usefulbecause absorbing too much heat may affect the curing process of curingthe films 4033. By this arrangement, the curing process for the films4033 (e.g., particularly the lowest one in FIG. 4) of the first set ofstacked semiconductor devices 403 is not affected by the backsidecooling unit 411.

In some embodiments, the backside cooling unit 411 can be shaped orformed according to the shape, materials, and/or characteristics of thebase substrate 401. The dimensions of the recess 413, for example, canbe determined based on the thermal conductivity of the base substrate401 and the load provided by the thermal component 409. For example, inembodiments where the base substrate 401 has a relatively high thermalconductivity, the dimension of the recess 413 can be relatively small.Conversely, when the base substrate 401 has a relatively low thermalconductivity, the dimension of the recess 413 can be relatively large.As shown in FIG. 4A, the recess 413 can have a lateral dimension from aside surface 4055 of the second set of stacked semiconductor devices 405to a side surface 4065 of the third set of stacked semiconductor devices406. In some embodiments, the recess 413 can have a lateral dimensionthe same as the lateral dimension of the first set of stackedsemiconductor devices 403 (e.g., from a first side surface 4035 to asecond side surface 4037 opposite the first side surface 4035). In someembodiments, the recess 413 can have a lateral dimension somewherebetween what is shown in FIG. 4A and the lateral dimension of the firstset of stacked semiconductor devices 403.

FIG. 4B shows another configuration in which the base substrate 401 inFIG. 4B is carried by a chuck table 402 and the backside cooling unit411 is attached to the chuck table 402. The backside cooling unit 411 isaccordingly not part of the semiconductor device assembly 400 (FIG. 4A),but instead is a feature of the chuck table 402. In such embodiments,the backside cooling unit 411 can absorb heat generated by the thermalcomponent 409 and inhibit or otherwise prevent such heat fromtransferring to either the second set of stacked semiconductor devices405 or the third set of stacked semiconductor devices 406 via the basesubstrate 401 and the chuck table 402.

FIG. 5 is a block diagram illustrating a system that incorporates asemiconductor assembly in accordance with an embodiment of the presenttechnology. Any one of the semiconductor devices having the featuresdescribed above with reference to FIGS. 1A-4B can be incorporated intoany of a myriad of larger and/or more complex systems, a representativeexample of which is a system 500 shown schematically in FIG. 5. Thesystem 500 can include a processor 501, a memory 503 (e.g., SRAM, DRAM,flash, and/or other memory devices), input/output devices 505, and/orother subsystems or components 507. The semiconductor assemblies,devices, and device packages described above with reference to FIGS. 1-4can be included in any of the elements shown in FIG. 5. The resultingsystem 500 can be configured to perform any of a wide variety ofsuitable computing, processing, storage, sensing, imaging, and/or otherfunctions. Accordingly, representative examples of the system 500include, without limitation, computers and/or other data processors,such as desktop computers, laptop computers, Internet appliances,hand-held devices (e.g., palm-top computers, wearable computers,cellular or mobile phones, personal digital assistants, music players,etc.), tablets, multi-processor systems, processor-based or programmableconsumer electronics, network computers, and minicomputers. Additionalrepresentative examples of the system 500 include lights, cameras,vehicles, etc. With regard to these and other examples, the system 500can be housed in a single unit or distributed over multipleinterconnected units, e.g., through a communication network. Thecomponents of the system 500 can accordingly include local and/or remotememory storage devices and any of a wide variety of suitablecomputer-readable media.

FIG. 6 is a flowchart illustrating a method 600 for managing thermalenergy in a semiconductor device assembly in accordance with anembodiment of the present technology. The method 600 starts, at block601, by positioning a thermal component adjacent to a first set ofstacked semiconductor devices of the semiconductor device assembly. Atblock 603, the method 600 continues by providing a temperature adjustingcomponent relative to the thermal component and adjacent to a second setof stacked semiconductor devices of the semiconductor device assembly.At block 605, the method 600 continues by absorbing at least a portionof the thermal energy generated by the thermal component via thetemperature adjusting component such that the temperature of the secondset of stacked semiconductor devices remains within a desired range(e.g., an increase of not more than 1 to 5 degree Celsius).

The method 600, for example, can include transferring at least a portionof the thermal energy generated by the thermal component to the firstset of stacked semiconductor devices such that the temperature of thefirst set of stacked semiconductor devices is increased. In someembodiments, the method 600 includes measuring a temperature of thefirst and/or second set(s) of stacked semiconductor devices, and inresponse to a change of the measured temperature adjusting a temperatureof the temperature adjusting component or a temperature of the thermalcomponent. For example, reducing the thermal energy when the temperatureof the first set of stacked semiconductor devices (e.g., 103 or 403) hasbeen at a sufficient temperature for a sufficient time to cure thecurable layers or films, or when the temperature of the first and/orsecond set(s) of stacked semiconductor devices exceeds a correspondingthreshold temperature.

In some embodiments, a method for managing thermal energy in accordancewith the present technology can include (1) applying thermal energy froma separate thermal component to a first set of stacked semiconductordevices of a semiconductor device assembly; and (2) absorbing, by atemperature adjusting component of the semiconductor device assembly, atleast a portion of thermal energy generated by the thermal component. Bythis arrangement, the portion of thermal energy can be inhibited fromincreasing the temperature of the second set of stacked semiconductordevices. In other words, the second set of stacked semiconductor devicescan be at least partially thermally isolated from the first set ofstacked semiconductor devices. In some embodiments, the method canfurther include measuring a temperature of the first and/or secondset(s) of stacked semiconductor devices. In some embodiments, the methodcan further include in response to a change of the measured temperature,adjusting the temperature of the temperature adjusting component. Insome embodiments, the method can further include in response to a changeof the measured temperature, adjusting the temperature of the thermalcomponent.

This disclosure is not intended to be exhaustive or to limit the presenttechnology to the precise forms disclosed herein. Although specificembodiments are disclosed herein for illustrative purposes, variousequivalent modifications are possible without deviating from the presenttechnology, as those of ordinary skill in the relevant art willrecognize. In some cases, well-known structures and functions have notbeen shown or described in detail to avoid unnecessarily obscuring thedescription of the embodiments of the present technology. Although stepsof methods may be presented herein in a particular order, alternativeembodiments may perform the steps in a different order. Similarly,certain aspects of the present technology disclosed in the context ofparticular embodiments can be combined or eliminated in otherembodiments. Furthermore, while advantages associated with certainembodiments of the present technology may have been disclosed in thecontext of those embodiments, other embodiments can also exhibit suchadvantages, and not all embodiments need necessarily exhibit suchadvantages or other advantages disclosed herein to fall within the scopeof the technology. Accordingly, the disclosure and associated technologycan encompass other embodiments not expressly shown or described herein.

Throughout this disclosure, the singular terms “a,” “an,” and “the”include plural referents unless the context clearly indicates otherwise.Similarly, unless the word “or” is expressly limited to mean only asingle item exclusive from the other items in reference to a list of twoor more items, then the use of “or” in such a list is to be interpretedas including (a) any single item in the list, (b) all of the items inthe list, or (c) any combination of the items in the list. Additionally,the term “comprising” is used throughout to mean including at least therecited feature(s) such that any greater number of the same featureand/or additional types of other features are not precluded. Referenceherein to “one embodiment,” “some embodiment,” or similar formulationsmeans that a particular feature, structure, operation, or characteristicdescribed in connection with the embodiment can be included in at leastone embodiment of the present technology. Thus, the appearances of suchphrases or formulations herein are not necessarily all referring to thesame embodiment. Furthermore, various particular features, structures,operations, or characteristics may be combined in any suitable manner inone or more embodiments.

From the foregoing, it will be appreciated that specific embodiments ofthe present technology have been described herein for purposes ofillustration, but that various modifications may be made withoutdeviating from the scope of the invention. The present technology is notlimited except as by the appended claims.

I/We claim:
 1. A semiconductor device assembly, comprising: a substratehaving a first side and a second side opposite the first side; a firstset of stacked semiconductor devices at the first side of the substrate;a second set of stacked semiconductor devices adjacent to the first setof stacked semiconductor devices; and wherein a temperature adjustingcomponent is at the second side of the substrate and at least partiallyaligned with the second set of stacked semiconductor devices, andwherein the temperature adjusting component is configured to absorb atleast a portion of a thermal energy applied to the first set of stackedsemiconductor devices and thereby inhibit the thermal energy fromheating the second set of stacked semiconductor devices.
 2. Thesemiconductor device assembly of claim 1, wherein the temperatureadjusting component is positioned with respect to the first and secondsets of stacked semiconductor devices to at least partially thermallyisolate the second set of stacked semiconductor devices from the firstset of stacked semiconductor devices.
 3. The semiconductor deviceassembly of claim 1, wherein the temperature adjusting component has arecess.
 4. The semiconductor device assembly of claim 3, wherein therecess is adjacent to the first set of stacked semiconductor devices. 5.The semiconductor device assembly of claim 1, wherein the temperatureadjusting component is a ring.
 6. The semiconductor device assembly ofclaim 1, wherein the first set of stacked semiconductor devices has afirst lateral dimension, and wherein the temperature adjusting componenthas a second lateral dimension larger than the first lateral dimension.7. The semiconductor device assembly of claim 1, wherein the temperatureadjusting component has an edge, and wherein the second set of stackedsemiconductor devices has a side, and wherein the edge of thetemperature adjusting component is aligned with the side of the secondset of stacked semiconductor devices.
 8. The semiconductor deviceassembly of claim 1, wherein the first set of stacked semiconductordevices has a first side, and wherein the second set of stackedsemiconductor devices has a second side, and wherein the first side andthe second side define an area.
 9. The semiconductor device assembly ofclaim 8, wherein the temperature adjusting component is in the area. 10.The semiconductor device assembly of claim 1, wherein the temperatureadjusting component is an active cooling unit.
 11. The semiconductordevice assembly of claim 1, wherein the temperature adjusting componentis a passive cooling unit.
 12. The semiconductor device assembly ofclaim 1, wherein the temperature adjusting component has a rectangularring shape.
 13. The semiconductor device assembly of claim 1, whereinthe temperature adjusting component is positioned to absorb the portionof the thermal energy.
 14. A method for managing thermal energy,comprising: applying thermal energy from a separate thermal component toa first set of stacked semiconductor devices of a semiconductor deviceassembly; and absorbing, by a temperature adjusting component of thesemiconductor device assembly, at least a portion of thermal energygenerated by the thermal component such that the portion of thermalenergy is inhibited from increasing a temperature of the second set ofstacked semiconductor devices.
 15. The method of claim 14, wherein thethermal energy is applied to first set of stacked semiconductor devicessuch that curable layers between dies of the first set of stackedsemiconductor devices are cured.
 16. The method of claim 14, furthercomprising measuring a temperature of the first or second set of stackedsemiconductor devices.
 17. The method of claim 16, further comprising:in response to a change of the measured temperature, adjusting atemperature of the temperature adjusting component.
 18. The method ofclaim 16, further comprising: in response to a change of the measuredtemperature, adjusting a temperature of the thermal component.
 19. Asemiconductor device assembly, comprising: a substrate having a firstside and a second side opposite the first side; a first set of stackedsemiconductor devices at the first side of the substrate; a second setof stacked semiconductor devices adjacent to one side of the first setof stacked semiconductor devices; a third set of stacked semiconductordevices adjacent to an opposite side of the first set of stackedsemiconductor devices; and a temperature adjusting component at thesecond side of the substrate and at least partially aligned with thesecond set of stacked semiconductor devices, the temperature adjustingcomponent being positioned with respect to the second set of stackedsemiconductor devices to absorb at least a portion of the thermal energyand thereby at least partially thermally isolate the second set ofstacked semiconductor devices from the first set of stackedsemiconductor devices.
 20. The semiconductor device assembly of claim19, wherein the temperature adjusting component has a recess and therecess is aligned with the first set of stacked semiconductor devices.